Higher Power.
Ease of Use.
No compromise.
MRFX Series
NXP's new 65 V LDMOS technology: designed for ease of use.
1
More power — Higher voltage enables higher power density, which helps reduce the number of transistors to combine.
Fewer combining losses, smaller PAs, simpler power supply management.
More power — Higher voltage enables higher power density, which helps reduce the number of transistors to combine.
More power — Higher voltage enables higher power density, which helps reduce the number of transistors to combine.
2
Faster development time — With higher voltage, the output power can be increased while retaining a reasonable output impedance.
Easier matching to 50 ohms; transistors can be used wideband.
Faster development time — With higher voltage, the output power can be increased while retaining a reasonable output impedance.
Faster development time — With higher voltage, the output power can be increased while retaining a reasonable output impedance.
3
Design reuse — This impedance benefit also ensures pin-compatibility with current 50 V LDMOS transistors for better scalability.
Little to no retuning from existing 50 V power amplifiers.
Design Reuse — This impedance benefit also ensures pin-compatibility with current 50 V LDMOS transistors for better scalability.
Design Reuse — This impedance benefit also ensures pin-compatibility with current 50 V LDMOS transistors for better scalability.
4
Manageable current level — Higher voltage reduces the current losses in the system.
Fewer stresses on DC supplies, better system efficiency, less magnetic radiation.
Manageable current level — Higher voltage reduces the current losses in the system.
Manageable current level — Higher voltage reduces the current losses in the system.
5
Wide safety margin — The higher breakdown voltage of 182 V improves ruggedness and allows for higher efficiency classes of operation.
Better reliability, higher efficiency.
Wide safety margin — The higher breakdown voltage of 182 V improves ruggedness and allows for higher efficiency classes of operation.
Wide safety margin — The higher breakdown voltage of 182 V improves ruggedness and allows for higher efficiency classes of operation.
Introducing the MRFX series, a whole new generation of 65 V LDMOS transistors.
Order the MRFX1K80H transistor now.
MRFX1K80H
1800 W CW over 1.8-470 MHz, 65 V RF Power LDMOS Transistor in Air Cavity Ceramic Package
Samples available
In production now
