Higher Power. Ease of Use.
No compromise.

MRFX Series

NXP's new 65 V LDMOS technology: designed for ease of use.


More power — Higher voltage enables higher power density, which helps reduce the number of transistors to combine.

Fewer combining losses, smaller PAs, simpler power supply management.


Faster development time — With higher voltage, the output power can be increased while retaining a reasonable output impedance.

Easier matching to 50 ohms; transistors can be used wideband.


Design reuse — This impedance benefit also ensures pin-compatibility with current 50 V LDMOS transistors for better scalability.

Little to no retuning from existing 50 V power amplifiers.


Manageable current level — Higher voltage reduces the current losses in the system.

Fewer stresses on DC supplies, better system efficiency, less magnetic radiation.


Wide safety margin — The higher breakdown voltage of 182 V improves ruggedness and allows for higher efficiency classes of operation.

Better reliability, higher efficiency.

Introducing the MRFX series, a whole new generation of 65 V LDMOS transistors.
Order the MRFX1K80H transistor now.


1800 W CW over 1.8-470 MHz, 65 V RF Power LDMOS Transistor in Over-Molded Plastic Package

Samples available in Q4 2017
Production in Q1 2018

The Five Benefits of 65 V LDMOS »

MRFX series is designed for ease of use

65 V Introduction »

Learn more about our 65 V technology and the MRFX1K80

Press Release »

NXP announces a new LDMOS technology

Want to see more? Visit our RF Power Transistors web site.